thru 1 0 a m p s cho t t k y b a r r i er rectifier features maximum ratings operating temperature: -5 5 c to +150 c storage temperature: -5 5 c to +175 c catalog number device marking maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum forward voltage drop per element maximum dc reverse current at rated dc blocking voltage *pulse test: pulse width 300 m sec, duty cycle 2 % ww w . cn ele c tr .com metal of siliconrectifier, majonty carrier conducton guard ring for transient protection low power loss high efficiency high surge capacity, high current capability 80-100 volts t j = 1 25 c peak forward surge current i fsm 120a 8.3ms, half sine 15m a 0.2m a t j = 25 c v f .85v .75v MBR10100CT MBR10100CT 100v 70v 100v mbr1080ct mbr1080ct 80v 56v 80v mbr1080ct MBR10100CT electrical characteristics @ 25 c unless otherwise specified average forward current i f(av) 10a t c = 100 c t j = 125 c i fm = 5a t j = 25 c typical junction capacitance 30 0 pf c j mea s u r ed at 1.0mhz, v r =4.0v ir shanghai lunsure electronic technology co.,ltd tel:0086-21-37185008 fax:0086-21-57152769 pin 1 pin 3 pin 2 case : inches mm
a .560 .625 14 . 22 15 . 88 b .380 . 420 9. 6 5 10 . 67 c .100 .135 2.54 3.43 d .230 .270 5.84 6.86 e .380 .420 9.65 10.67 f ------ .250 ------ 6.35 g .500 .580 12.70 14.73 h .090 .110 2.29 2.79 i .020 .045 0.51 1.14 j .012 .025 0.30 0.64 k .139 .161 3.53 4.09 l .140 .190 3.56 4.83 m .045 .055 1.14 1.40 n .080 .115 2.03 2.92 a b c k j i h g f e d n m l h to-220 ab p i n
rating and characteristic curves m b r 1 0 80 c t thru mbr 10100ct fig.2 - maximum non-repetitive surge current number of cycles at 60hz peak forward surge current, amperes 1 5 10 50 100 2 20 0 25 50 75 100 1 2 0 1 4 0 fig.1 - forward current derating curve average forward current amperes 25 75 100 125 150 4 0 50 16 175 percent of rated peak reverse voltage ,(%) fig.3 - typical reverse characteristics instantaneous reverse current ,(ma) 20 40 120 140 0.001 0.1 1.0 100 10 60 80 100 0.01 t j = 25 c 8.3ms single half-sine-wave (jedec method) 12 0 8 resistive or inductive load instantaneous forward voltage , volts fig.4 - typical forward characteristics instantaneous forward current ,(a) 0.2 0.3 0.7 0.8 1.0 10 100 0.4 0.5 0.6 0.1 1.0 0.9 instantaneous forward voltage , volts instantaneous forward current ,(a) 0.1 1.0 10 100 0.1 pulse width 300us 2% duty cycle t j = 25 c case temperature , c 0 ww w . cn el ec tr .com fig.5 - typical junction capacitance capacitance , (pf) reverse voltage , volts 10 1 100 1000 100 10 0.1 4 t j = 25 c, f= 1mhz
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